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| Infrared Light Emitting Diodes LN59, LNA2702L GaAs Bi-directional Infrared Light Emitting Diodes LN59 o2.50.2 6.00.2 1.0 Not soldered Unit : mm 4.00.2 1.80.2 For light source of VCR (VHS System) Features Two-way directivity Small resin package Long lifetime, high reliability Long lead wire type (LNA2702L) High-power output, high-efficiency : PO = 1.8 mW (min.) 2-R1.250.1 4.00.2 1.0 3.3 15.31.0 2-0.8 max. 2-0.50.1 0.50.1 1 C0.5 2 2.54 Applications Light source for tape end sensor of VCR and video camera recorder of VHS system Light source for 2-bit photo sensor 1: Anode 2: Cathode LNA2702L Not soldered o2.50.2 6.00.2 4.00.2 3.3 1.0 4.00.2 1.80.2 2-R1.250.1 Absolute Maximum Ratings (Ta = 25C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 75 50 1 3 -25 to +85 - 40 to +100 Unit mW mA A V C 16.6 1.0 2-0.8 max. 2-0.50.1 0.50.1 33.70.5 3.5 2-0.7 max. 2-0.50.1 1 2 2.54 C0.5 1: Anode 2: Cathode C f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins * Symbol P O* P VF IR Ct Conditions IF = 50mA IF = 20mA IF = 20mA IF = 50mA VR = 3V VR = 0V, f = 1MHz min 1.8 typ 950 50 1.3 35 max Unit mW nm nm 1.5 10 V A pF Radiant power PO shows each value of radiant flux P1 and P2 in two directions. P1 P2 1 Infrared Light Emitting Diodes LN59, LN2702L IF -- Ta 60 10 2 IFP -- Duty Cycle tw = 10s Ta = 25C 80 70 IF -- VF Ta = 25C IF (mA) IFP (A) 50 IF (mA) Forward current 1 10 10 2 10 60 50 40 30 20 10 Allowable forward current 40 Pulse forward current 30 1 20 10 -1 10 0 - 25 0 20 40 60 80 100 10 -2 10 -1 0 0 0.4 0.8 1.2 1.6 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage VF (V) PO -- IFP 10 2 (1) tw = 10s f = 100Hz (2) DC Ta = 25C (1) 1.6 VF -- Ta 10 3 PO -- Ta IF = 20mA Relative radiant power PO VF (V) 10 1.2 10mA 1mA 1 (2) 0.8 Relative radiant power PO 120 IF = 50mA Forward voltage 10 2 10 -1 0.4 10 -2 10 -3 10 -2 10 -1 1 0 - 40 0 40 80 10 - 40 0 40 80 Pulse forward current IFP (A) Ambienttemperature Ta (C ) Ambient temperature Ta (C ) P -- Ta 1000 IF = 20mA 100 Spectral characteristics IF = 20mA Ta = 25C 50 40 30 20 60 10 0 40 Directivity characteristics 60 70 80 90 100 110 120 Peak emission wavelength P (nm) Relative radiant intensity (%) 130 80 60 40 20 140 150 160 170 180 20 40 960 940 Relative radiant intensity (%) 980 80 920 20 60 80 900 - 40 0 40 80 120 0 860 900 940 980 1020 1060 1100 Ambient temperature Ta (C ) Wavelength (nm) 2 |
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